The 74th JSAP Autumn Meeting,2013

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Oral presentation

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[18p-D1-1~17] 6.2 Carbon-based thin films

Wed. Sep 18, 2013 1:00 PM - 5:45 PM D1 (MK 1F-101)

2:00 PM - 2:15 PM

△ [18p-D1-5] Breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

○Tetsuya Yamada1, Tomoya Naruo1, Hidetoshi Tsuboi1, Dechen Xu1, Akira Daicho1, Tatsuya Saito1, Kazuhiro Kuruma1, Atsushi Hiraiwa1, Hiroshi Kawarada1 (Waseda Univ.1)

Keywords:ダイヤモンド,MOSFET,耐圧