Poster presentation

[17a-P15-1~9] 6.2 Carbon-based thin films

Tue. Sep 17, 2013 9:30 AM - 11:30 AM P15 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[17a-P15-1] Decomposition reaction of tetramethylsilane with RF plasma of Ar

^○Nobuyoshi Mogi¹, Haruhiko Ito¹ (Nagaoka Univ.¹)

9:30 AM - 11:30 AM

[17a-P15-2] Observation of free radicals in the microwave discharge flow C₆H₆/N₂ gas mixture

^○Akira Kojima¹, Hiroki Tsudome¹, Kohtaro Okada¹, Ayumi Yamamoto¹, Haruhiko Ito¹ (Nagaoka Univ.¹)

9:30 AM - 11:30 AM

[17a-P15-3] Synthesis of DLC-Si Films using Plasma Generated by Pulse-Bias Voltage

^○Yuya Tachibana¹, Noriaki Ikenaga¹, Ryouichi Hanaoka¹, Noriyuki Sakudo¹ (Kanazawa Inst.¹)

9:30 AM - 11:30 AM

[17a-P15-4] Emission Spectra of Carbon Nitride Thin Films Deposited at Different RF Powers for Application To White Light Emitting Device

^○Masaki Satake¹, Takashi Okawa¹, Michihito Teramoto², Kunio Itoh², Kenta Kametomo³, Ken-ichi Takarabe³, Kazutoshi Fukui⁴, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Tsuyama Nat. College of Tech.², Okayama Univ. of Sci.³, Univ. of Fukui⁴)

9:30 AM - 11:30 AM

[17a-P15-5] Analysing deep level defect in CVD Diamond films

^○Takanori Hori¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Eng, Osaka Univ.¹)

9:30 AM - 11:30 AM

[17a-P15-6] Development of High-Quality Diamond Growth Process Using Microwave Plasma CVD Apparatus with Specific Metal Chamber in Shape

^○Masakazu Miyata¹, Osamu Maida¹, Syouhei Nankou², Toshimichi Ito¹ (Graduate School of Engineering, Osaka Univ.¹, Nisshin Inc.²)

9:30 AM - 11:30 AM

[17a-P15-7] Optimization of device structure suitable for normally-off-type CVD diamond FET with vertical current flow

^○Kazutoshi Mio¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Engineering, Osaka Univ.¹)

9:30 AM - 11:30 AM

[17a-P15-8] Fabrication process suitable for δ P-doped diamond multi-layered film on vicinal (001) substrate using high-power-density microwave plasma CVD method

^○Norimasa Ohashi¹, Osamu Maida¹, Toshimichi Ito¹ (Osaka Univ.¹)

9:30 AM - 11:30 AM

[17a-P15-9] Optimization of fabrication process proposed for fine columnar structure of high-quality CVD diamond and its device application

^○Ryuichi Hashimoto¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Engineering, Osaka Univ.¹)

Oral presentation

[17p-D1-1~18] 6.2 Carbon-based thin films

Tue. Sep 17, 2013 1:30 PM - 6:45 PM D1 (MK 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[17p-D1-1] Film Thickness Control of Super DLC Films by In-situ Monitoring of Film Reflection

Michinari Hosoo¹, ^○Hideto Tanoue¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Masao Kamiya², Makoto Taki³, Yushi Hasegawa³, Nobuhiro Tsuji³, Abusuilik Saleh⁴ (Toyohashi Univ. Technol¹, Itoh Opt. Ind. Co., Ltd.², Onward Ceramic Coating Co., Ltd.³, Hitachi Tool Eng., Ltd.⁴)

1:45 PM - 2:00 PM

[17p-D1-2] Tetrahedral amorphous carbon with very small amount of hydrogen

^○Hiroshi Inaba¹, Toru Matsumura¹, Hiroyuki Matsumoto¹ (HGST Japan Research Lab.¹)

2:00 PM - 2:15 PM

[17p-D1-3] a-CNx:H Film CVD using Band Type Supermagnetron Plasma (III)

^○Haruhisa Kinoshita¹, Syunsuke Yagi¹ (Shizuoka Univ., Grad. Sch. Eng.¹)

2:15 PM - 2:30 PM

[17p-D1-4] In situ observation of acid resistance of hydrogenated amorphous carbon films under the bias voltage using surface plasmon resonance phenomenon

^○Yasuyuki Nakaya¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

2:30 PM - 2:45 PM

[17p-D1-5] Evaluation of corrosion resistance to potassium hydroxide of hydrogenated amorphous carbon films

^○Yasuyuki Nakaya¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

2:45 PM - 3:00 PM

[17p-D1-6] Characterizations wavelength dependence of refractive index and extinction coefficient of hydrogenated amorphous carbon films by spectroscopic ellipsometry

^○Satoru Arakawa¹, Hisashi Yoshioka¹, Kazuya Mizuguchi¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[17p-D1-7] Rectification characteristics of amorphous carbon film synthesized on Si substrate

^○Hisashi Yoshioka¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

3:30 PM - 3:45 PM

[17p-D1-8] Thermal dependence of resistivity on diamond-like carbon film

^○Hisashi Yoshioka¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

3:45 PM - 4:00 PM

[17p-D1-9] Water elimination from chemical vapor deposition process of hydrogenated amorphous carbon films

^○Xiaolong Zhou¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

4:00 PM - 4:15 PM

[17p-D1-10] Chemical vapor deposition of hydrogenated amorphous carbon films using rf plasma with application of pulse bias voltage

^○Xiaolong Zhou¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

4:15 PM - 4:30 PM

△ [17p-D1-11] The graphitization of hydrogenated DLC films by the soft X-ray irradiation

^○Ryo Imai¹, Masahito Niibe¹, Kazuhiro Kanda¹ (LASTI, Univ. of Hyogo¹)

4:30 PM - 4:45 PM

[17p-D1-12] Response characteristics of the photocurrent of carbon film by microwave surface wave plasma CVD

^○Susumu Ichimura^1,2, Ghimire Dilip. C.¹, Adhikari Sudip¹, Hideo Uchida¹, Koichi Wakita¹, Yasuhiko Hayashi², Masayoshi Umeno¹ (Chubu Univ.¹, Okayama Univ.²)

Break （4:45 PM - 5:00 PM）

5:00 PM - 5:30 PM

[17p-D1-13] [INVITED]Biocompatibility of DLC and its application

^○kenji Hirakuri¹ (Tokyo Denki University¹)

5:30 PM - 5:45 PM

[17p-D1-14] Enhancing cell adhesion sensitivity of Quartz Crystal Microbalance (QCM) sensor by hydrogenated amorphous carbon (a-C:H) coating

^○Yasuharu Ohgoe¹, Nurhanisah Sanin¹, Tomoko Abe¹, Masanori Hiratsuka², Masao Yamana¹, Kenji Hirakuri¹, Akihiko Homma¹, Akio Funakubo¹, Yasuhiro Fukui¹ (Tokyo Denki Univ.¹, Nanotec Co.²)

5:45 PM - 6:00 PM

[17p-D1-15] Relationship between Raman and XPS Analyses of Diamondlike Carbon Films

^○Susumu Takabayashi¹, Takayuki Takahagi² (RIEC, Tohoku Univ.¹, AdSM, Hiroshima Univ.²)

6:00 PM - 6:15 PM

[17p-D1-16] Growth of iodine incorporated amorphous carbon thin films

^○Takashi Matsufuji¹, Setsuo Nakao², Naoki Kishi¹, Tetsuo Soga¹ (Nagoya Inst. Tech.¹, AIST²)

6:15 PM - 6:30 PM

[17p-D1-17] Formation of a-SiCx:H films in microwave discharge flow of Ar

^○Motoki Kumakura¹, Tsuneo Suzuki¹, Hidetoshi Saitoh¹, Haruhiko Ito¹ (Nagaoka Univ. of Tech.¹)

6:30 PM - 6:45 PM

△ [17p-D1-18] Influence of substrate bias voltage on properties of Si and N co-doped DLC films

^○Kouhei Magara¹, Saori Okuno¹, Yusuke Onishi¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

Oral presentation

[18a-D1-1~10] 6.2 Carbon-based thin films

Wed. Sep 18, 2013 9:15 AM - 12:00 PM D1 (MK 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[18a-D1-1] High rate homoepitaxial growth of Diamond (111) by MPCVD using spherical cavity

^○Ryusuke Morimoto¹, Shunsuke Watanabe¹, Junya Yaita¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², CREST(JST)³)

9:30 AM - 9:45 AM

[18a-D1-2] Highly purified ¹²C-enriched homoepitaxial diamond films growth

^○Tokuyuki TERAJI¹, Takashi YAMAMOTO^1,2, Satoshi KOIZUMI¹, Kenji WATANABE¹, Takashi TANIGUCHI¹, Sinobu ONODA², Takeshi OHSHIMA², Boris NAYDENOV³, Fedor JELEZKO³, Junichi ISOYA⁴ (NIMS¹, JAEA², Univ. Ulm³, Univ. Tsukuba⁴)

9:45 AM - 10:00 AM

△ [18a-D1-3] Defect examination of heteroepitaxial diamond by etch pit method Ⅳ

^○Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENG.²)

10:00 AM - 10:15 AM

△ [18a-D1-4] High quality heteroepitaxial diamond growth using fine-line nucleation region-2 -Dislocation density examination-

^○Genta Nozaki¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Shozo Kono¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENGINEERING CO.,LTD.²)

10:15 AM - 10:30 AM

△ [18a-D1-5] Improvement of the electrical characteristics by the boron δ-doping

^○Takuma Minamiyama¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST,CREST³)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-D1-6] Hole diffusion from heavily-doped degenerate p-type diamond thin layer in a state of separated islands

^○Daichi Ichikawa¹, Osamu Maida¹, Toshimichi Ito¹ (Osaka Univ.¹)

11:00 AM - 11:15 AM

△ [18a-D1-7] The transmittance and sheet resistance optimization of the Boron-doped P-type transparent conducting films

^○Taisuke Kageura¹, Mitsuyasu Koga¹, Ishak Khairul¹, Yukihiro Shintani¹, Masataka Hasegawa², Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹, AIST²)

11:15 AM - 11:30 AM

[18a-D1-8] Evolution from impurity band to diamond-like valence band in boron doped diamond

^○Takashi Inushima¹, Yuuichi Ota¹ (Tokai Univ.¹)

11:30 AM - 11:45 AM

△ [18a-D1-9] Thermal stability of surface C-H bonds of diamond

^○Yuji Seshimo¹, Tomohiro Hakamata¹, Wako Ono¹, Yuki Yokoyama¹, Daiki Utsunomiya¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

11:45 AM - 12:00 PM

△ [18a-D1-10] Fluorine Termination of Diamond Surface by F₂ gas

^○Mikinori Kobayashi¹, Yukihiro Shintani^1,2, Miho Myodo¹, Hiroshi Kawarada¹ (Waseda Univ.¹, Yokogawa Electric Corp.²)

Oral presentation

[18p-D1-1~17] 6.2 Carbon-based thin films

Wed. Sep 18, 2013 1:00 PM - 5:45 PM D1 (MK 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[18p-D1-1] The effect of O₂ plasma asshing after carbon layers formation at Ti/n-type diamond interface

^○(DC)Tsubasa Matsumoto^1,2,3, Kazuya Shirota^1,2,3, Hiromitsu Kato^2,3, Norio Tokuda^2,3,4, Daisuke Takeuchi^2,3, Toshiharu Makino^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (University of Tsukuba¹, AIST², CREST c/o AIST³, Kanazawa University⁴)

1:15 PM - 1:30 PM

▼ [18p-D1-2] Homogeneity of WC p-type diamond Schottky interfaces

^○Alexandre Fiori¹, Tokuyuki Teraji¹, Yasuo Koide¹ (NIMS¹)

1:30 PM - 1:45 PM

△ [18p-D1-3] Enhanced dielectric strength of high-temperature annealed ALD-Al₂O₃films

^○Kazuhiro Kuruma¹, Tatsuya Saito¹, Akira Daicho¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

1:45 PM - 2:00 PM

△ [18p-D1-4] High temperature operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation

^○Dechen Xu¹, Hidetoshi Tsuboi¹, Tomoya Naruo¹, Tetsuya Yamada¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda University¹)

2:00 PM - 2:15 PM

△ [18p-D1-5] Breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Break （2:15 PM - 2:30 PM）

2:30 PM - 2:45 PM

[18p-D1-6] On/off ratio and temperature dependence of pulse current injection in diamond exciton LED

^○Daisuke Kuwabara^1,2,3, Toshiharu Makino^2,3, Satoshi Koizumi^3,4, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^2,3 (Univ.of Tukuba¹, ETRI,AIST², CREST/JST³, NIMS⁴)

2:45 PM - 3:00 PM

[18p-D1-7] Electron Emission from Ib Diamond with Low Extraction Voltage

^○Yuki Kudo^1,2,3,4, Daisuke Takeuchi^2,3,4, Toshiharu Makino^2,3,4, Masahiko Ogura^2,3,4, Hiromitsu Kato^2,3,4, Hideyo Okushi^2,3,4, Satoshi Yamasaki^1,2,3,4 (Univ. of Tsukuba¹, AIST², CREST(JST)³, ALCA(JST)⁴)

3:00 PM - 3:15 PM

[18p-D1-8] CEES measurements of the high concentration boron-doped diamond films

^○Shunsuke Kondou¹, Kazutoshi Fukui¹, Kohji Yamamoto², Takashi Inushima³ (Fac. of Engi., Univ. of Fukui¹, FIR Center, Univ. of Fukui², Tokai Univ³)

3:15 PM - 3:30 PM

[18p-D1-9] Hot-filament-CVD-made superconducting diamond films with higher Tc at lower carrier concentration

^○Yuji Muraoka¹, Chiaki HIramatsu¹, Takanori Wakita¹, Takayoshi Yokoya¹, Hiroshi Kumigashira², Masaharu Oshima³ (Okayama Univ.¹, KEK², The Univ. of Tokyo³)

3:30 PM - 3:45 PM

[18p-D1-10] Graphene Production by Electrolytic Exfoliation of Natural Graphite with Potassium Hydroxide

^○Sotaro Akiyama^1,2, Emi Kano^1,2, Tomohiko Igari¹, Xiuqin Chen¹, Masaki Takeguchi³, Katsuhisa Murakami^1,2, Jun-ichi Fujita^1,2 (University of Tsukuba¹, Tsukuba Research Center for Interdisciplinary Materials Science², National Institute for Materials Science³)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

△ [18p-D1-11] Formation of graphene using carbon thin film DLC and evaluation

^○(M1)Naohiro Ryu¹, Taiji Takeuchi¹, Yuriko Imanaga¹, Motoi Nakao¹, Satoko Okubayashi², Sinji Nagamachi³ (Kyusyu Inst. Tech.¹, Kyouto Inst. Tech², Nagamachi Science Laboratory Co.,Ltd.³)

4:15 PM - 4:30 PM

[18p-D1-12] Relationship between structure and photovoltaic properties in semiconducting Single-walled Carbon Nanotubes/Si heterojunction cells

^○(M1)Atsushi Nakano¹, Hironori Ogata¹, Mao Syouji¹, Jiyou Kim¹ (Hosei Univ.¹)

4:30 PM - 4:45 PM

[18p-D1-13] Fabrication of nanodiamond particles by chemical modification for MRI contrast agents

^○Takako Nakamura¹, Tsuguyori Ohana¹, Tetsuo Tsuchiya¹, Hajime Yabuno², Rumiko Kasai³, Tetsuya Suzuki², Terumitsu Hasebe⁴ (AIST¹, Keio Univ.², Toho Univ.³, Tokai Univ.⁴)

4:45 PM - 5:00 PM

[18p-D1-14] Characterization of N-doped DLC thin films prepared by the thermal decomposition method

^○Yuma Murata¹, Katsumi Tanaka¹, Ono Hiroshi¹, Cheow-Keong Choo¹, Yutaka Nagai¹ (Electro-Communications Univ.¹)

5:00 PM - 5:15 PM

△ [18p-D1-15] Fabrication of graded band-gap amorphous carbon nitride films

^○Naoyuki Tamura¹, Masami Aono¹, Tomo Harata¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

5:15 PM - 5:30 PM

△ [18p-D1-16] Dependence of Wavelength on Reversible Photo-induced Volume Changes of Amorphous Carbon Nitride Films

^○Tomo Harata¹, Masami Aono¹, Naoyuki Tamura¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

5:30 PM - 5:45 PM

[18p-D1-17] Decomposition of C₂H₂ in the microwave discharge flow of N₂ : Observation of free radicals by laser spectroscopy

^○Hiroki Tsudome¹, Haruhiko Ito¹ (Nagaoka Univ.¹)

Sessions

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[17a-P15-1~9] 6.2 Carbon-based thin films

[17p-D1-1~18] 6.2 Carbon-based thin films

△ [17p-D1-11] The graphitization of hydrogenated DLC films by the soft X-ray irradiation

△ [17p-D1-18] Influence of substrate bias voltage on properties of Si and N co-doped DLC films

[18a-D1-1~10] 6.2 Carbon-based thin films

△ [18a-D1-3] Defect examination of heteroepitaxial diamond by etch pit method Ⅳ

△ [18a-D1-4] High quality heteroepitaxial diamond growth using fine-line nucleation region-2 -Dislocation density examination-

△ [18a-D1-5] Improvement of the electrical characteristics by the boron δ-doping

△ [18a-D1-7] The transmittance and sheet resistance optimization of the Boron-doped P-type transparent conducting films

△ [18a-D1-9] Thermal stability of surface C-H bonds of diamond

△ [18a-D1-10] Fluorine Termination of Diamond Surface by F2 gas

[18p-D1-1~17] 6.2 Carbon-based thin films

▼ [18p-D1-2] Homogeneity of WC p-type diamond Schottky interfaces

△ [18p-D1-3] Enhanced dielectric strength of high-temperature annealed ALD-Al2O3films

△ [18p-D1-4] High temperature operation of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

△ [18p-D1-5] Breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

△ [18p-D1-11] Formation of graphene using carbon thin film DLC and evaluation

△ [18p-D1-15] Fabrication of graded band-gap amorphous carbon nitride films

△ [18p-D1-16] Dependence of Wavelength on Reversible Photo-induced Volume Changes of Amorphous Carbon Nitride Films

△ [18a-D1-10] Fluorine Termination of Diamond Surface by F₂ gas

△ [18p-D1-3] Enhanced dielectric strength of high-temperature annealed ALD-Al₂O₃films

△ [18p-D1-4] High temperature operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation