[18p-D1-1~17] 6.2 Carbon-based thin films

△ [18p-D1-5] Breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Keywords:ダイヤモンド,MOSFET,耐圧