[18p-P10-1~13] 13.6 Silicon devices / Integration technology

[18p-P10-6] Demonstration of high mobility InGaAs/Ge CMOS using stacked 3D integration

^○Toshifumi Irisawa¹, Minoru Oda¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Keiji Ikeda¹, Eiko Mieda¹, Jevaswan Wipakorn¹, Tatsurou Maeda¹, Osamu Ichikawa², Takenori Osada², Masahiko Hata², Tsutomu Tezuka¹ (AIST-GNC¹, Sumitomo Cemical Co. Ltd²)

Keywords:InGaAs, Ge, CMOS, 3D integration