[18p-P10-1~13] 13.6 Silicon devices / Integration technology

[18p-P10-9] Low-dielectric constant SiCN charge trapping layer for nonvolatile memory applications

^○Shinji Naito¹, Shuichi Nakiri², Yoshina Ito², Hironobu Shiraiwa², Kiyoteru Kobayashi^1,2 (Graduate School of Engineering, Tokai Univ.¹, Tokai Univ.²)

Keywords:不揮発性メモリ,SiCN