The 74th JSAP Autumn Meeting,2013

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Oral presentation

07. Beam Technology and Nanofabrication » 7.6 Ion beams

[19a-A12-1~8] 7.6 Ion beams

Thu. Sep 19, 2013 10:00 AM - 12:00 PM A12 (TC1 3F-316)

10:30 AM - 10:45 AM

[19a-A12-3] Effect of ion irradiation energy in GaN growth on the Ga-ion-implanted SiNx surface

○Azamat Oshurahunov1, Yuto Matsui1, Junichi Yanagisawa1, Issei Satoh2, Yoshiyuki Yamamoto2 (Univ. of Shiga Prefecture1, Sumitomo Electric Ind., Ltd.2)

Keywords:GaN,窒化ガリウム,窒化シリコン