The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-B5-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:30 AM - 11:45 AM

[19a-B5-10] Suppression of In incorporation by Si-doping in MOVPE growth of InGaN

Akihiro Mihara1,2, Naoteru Shigekawa3, ○Akio Yamamoto1,2 (Univ. of Fukui1, JST-CREST2, Osaka City Univ.3)

Keywords:InGaN,Siドーピング