N-face GaN (000-1) grown by flow-rate modulation epitaxy of group-III precursors

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

10:00 AM - 10:15 AM

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

Keywords:N-face GaN