[19a-C8-1~12] 13.6 Silicon devices / Integration technology

[19a-C8-12] SRAM Cell Stability Parameter: Noise Margin or Vmin?

^○Anil Kumar¹, Takuya Saraya¹, Shinji Miyano², Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, STARC²)

Keywords:SRAM,ばらつき