[19a-C8-1~12] 13.6 Silicon devices / Integration technology

△ [19a-C8-5] Dependence of soft error rate in SOI SRAM on generated charge under buried oxide by high energy ion probes

^○Masatoshi Hazama¹, Satoshi Abo¹, Fujio Wakaya¹, Takahiro Makino², Shinobu Onoda², Takeshi Ohshima², Toshiaki Iwamatsu³, Hidekazu Oda³, Mikio Takai¹ (CQSTEC¹, JAEA², Renesas Electronics Corp.³)

Keywords:SOI,ソフトエラー,高エネルギーイオンプローブ