[19a-P3-1~27] 6.3 Oxide-based electronics

[19a-P3-26] Current – voltage characteristics of ReRAM involving porous alumina thin film with additional space control by pore widening

^○Yusuke Tanimoto¹, Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Syoso Shingubara² (Nihon Univ.¹, Kansai Univ.²)

Keywords:抵抗変化型メモリ,陽極酸化ポーラスアルミナ