[19a-P7-1~14] 14.3 Electron devices and Process technology

[19a-P7-11] Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation

^○Masayuki Kamiya¹, Kazuma Terayama¹, Yusuke Takei¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, Toshiba²)

Keywords:GaN,コンタクト,2次元電子ガス