Session information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-P7-1] Characterization of traps in high-resistivity GaN

^○Yutaka Tokuda¹, Takeshi Tanaka^2,3, Shiojima Kenji², Otoki Yohei³ (Aichi Inst. of Technol.¹, Univ. of Fukui², Hitachi Cable³)

9:30 AM - 11:30 AM

[19a-P7-2] Influence of plasma condition on degradation of electrical properties of n-GaN upon plasma exposure

^○Naoki Hongo¹, Takuma Takimoto¹, Seizi Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

9:30 AM - 11:30 AM

△ [19a-P7-3] Mapping evaluation of n-GaN Schottky diodes using scanning internal photoemission microscopy

^○Shingo Yamamoto¹, Toshichika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima², Kenji Shiojima¹ (Univ. of Fukui¹, Hitachi Cable²)

9:30 AM - 11:30 AM

[19a-P7-4] Evaluated a-face low-Mg-doped p-GaN Schottky contacts

^○Toshichika Aoki¹, Ji-Su Son², Hiroshi Amano², Kenji Shiojima¹ (Univ. of Fukui¹, Univ. of Nagoya²)

9:30 AM - 11:30 AM

[19a-P7-5] Strain of GaN grown on Si(111) substrates by using SLS

^○Ryuhei Oda¹ (NIT¹)

9:30 AM - 11:30 AM

[19a-P7-6] MISFETs with Ion Implanted Isolation Layers on p-GaN Substrate

^○(M1)hayao kasai¹, hiroki ogawa¹, tohru nakamura¹ (Hosei Univ.¹)

9:30 AM - 11:30 AM

[19a-P7-7] The Characteristics of Ion-Implanted Field Plate GaN-HEMT

^○Takuya Aoyagi¹, Yutaro Okada¹, Tohru Nakamura¹ (Hosei Univ¹)

9:30 AM - 11:30 AM

[19a-P7-8] Gate bias dependence of electroluminescence in AlGaN/GaN HEMT with a transparent gate electrode

^○Tomotaka Narita¹, Yuichi Fujimoto¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[19a-P7-9] Potential characterization of the AlGaN/GaN HEMTs with Al₂O₃ and SiN passivation layers deposited by the ECR sputter

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (Transmission Device Lab. SEI¹)

9:30 AM - 11:30 AM

[19a-P7-10] Effect of Annealing on Contact Properties with TiSi₂ Electrodes on AlGaN/GaN

^○Mari Okamoto¹, Yoshihiro Matsukawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hiroshi Iwai¹, Hitoshi Wakabayashi², Kazuo Tsutsui¹, Wataru Saito³, Kenji Natori¹ (Tokyo Tech.FRC¹, IGSSE², Toshiba corp³)

9:30 AM - 11:30 AM

[19a-P7-11] Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation

^○Masayuki Kamiya¹, Kazuma Terayama¹, Yusuke Takei¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, Toshiba²)

9:30 AM - 11:30 AM

[19a-P7-12] Fabrication of AlGaN/GaN-based p-channel HFETs

^○Hiriaki Yonezawa¹, Akira Nakajima³, Shinichi Nishizawa³, Hiromichi Ohashi³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech.IGSSE¹, Tokyo Tech.FRC², AIST³)

9:30 AM - 11:30 AM

[19a-P7-13] Study on Fabrication Sequence of InAlN MOS Diodes with ALD-Al₂O₃ Insulator Layer

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

9:30 AM - 11:30 AM

[19a-P7-14] Photo-induced current in n-AlGaAs/GaAs heterojunction channels driven by local illumination at edge regions of Hall bar

^○Takuya Kawazu¹, Takeshi Noda¹, Takaaki Mano¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^1,2 (NIMS¹, Toyota Tech. Inst.²)

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