The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P7-12] Fabrication of AlGaN/GaN-based p-channel HFETs

○Hiriaki Yonezawa1, Akira Nakajima3, Shinichi Nishizawa3, Hiromichi Ohashi3, Kazuo Tsutsui1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Hiroshi Iwai2 (Tokyo Tech.IGSSE1, Tokyo Tech.FRC2, AIST3)

Keywords:p-channel,GaN,HFET