The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P7-13] Study on Fabrication Sequence of InAlN MOS Diodes with ALD-Al2O3 Insulator Layer

○Masahito Chiba1, Takuma Nakano1, Masamichi Akazawa1 (Hokkaido Univ.1)

Keywords:InAlN,MOS,界面