The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P7-4] Evaluated a-face low-Mg-doped p-GaN Schottky contacts

○Toshichika Aoki1, Ji-Su Son2, Hiroshi Amano2, Kenji Shiojima1 (Univ. of Fukui1, Univ. of Nagoya2)

Keywords:a面GaN,I-V特性,光応答法