Poster presentation

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-P7-1] Characterization of traps in high-resistivity GaN

^○Yutaka Tokuda¹, Takeshi Tanaka^2,3, Shiojima Kenji², Otoki Yohei³ (Aichi Inst. of Technol.¹, Univ. of Fukui², Hitachi Cable³)

9:30 AM - 11:30 AM

[19a-P7-2] Influence of plasma condition on degradation of electrical properties of n-GaN upon plasma exposure

^○Naoki Hongo¹, Takuma Takimoto¹, Seizi Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

9:30 AM - 11:30 AM

△ [19a-P7-3] Mapping evaluation of n-GaN Schottky diodes using scanning internal photoemission microscopy

^○Shingo Yamamoto¹, Toshichika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima², Kenji Shiojima¹ (Univ. of Fukui¹, Hitachi Cable²)

9:30 AM - 11:30 AM

[19a-P7-4] Evaluated a-face low-Mg-doped p-GaN Schottky contacts

^○Toshichika Aoki¹, Ji-Su Son², Hiroshi Amano², Kenji Shiojima¹ (Univ. of Fukui¹, Univ. of Nagoya²)

9:30 AM - 11:30 AM

[19a-P7-5] Strain of GaN grown on Si(111) substrates by using SLS

^○Ryuhei Oda¹ (NIT¹)

9:30 AM - 11:30 AM

[19a-P7-6] MISFETs with Ion Implanted Isolation Layers on p-GaN Substrate

^○(M1)hayao kasai¹, hiroki ogawa¹, tohru nakamura¹ (Hosei Univ.¹)

9:30 AM - 11:30 AM

[19a-P7-7] The Characteristics of Ion-Implanted Field Plate GaN-HEMT

^○Takuya Aoyagi¹, Yutaro Okada¹, Tohru Nakamura¹ (Hosei Univ¹)

9:30 AM - 11:30 AM

[19a-P7-8] Gate bias dependence of electroluminescence in AlGaN/GaN HEMT with a transparent gate electrode

^○Tomotaka Narita¹, Yuichi Fujimoto¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[19a-P7-9] Potential characterization of the AlGaN/GaN HEMTs with Al₂O₃ and SiN passivation layers deposited by the ECR sputter

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (Transmission Device Lab. SEI¹)

9:30 AM - 11:30 AM

[19a-P7-10] Effect of Annealing on Contact Properties with TiSi₂ Electrodes on AlGaN/GaN

^○Mari Okamoto¹, Yoshihiro Matsukawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hiroshi Iwai¹, Hitoshi Wakabayashi², Kazuo Tsutsui¹, Wataru Saito³, Kenji Natori¹ (Tokyo Tech.FRC¹, IGSSE², Toshiba corp³)

9:30 AM - 11:30 AM

[19a-P7-11] Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation

^○Masayuki Kamiya¹, Kazuma Terayama¹, Yusuke Takei¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, Toshiba²)

9:30 AM - 11:30 AM

[19a-P7-12] Fabrication of AlGaN/GaN-based p-channel HFETs

^○Hiriaki Yonezawa¹, Akira Nakajima³, Shinichi Nishizawa³, Hiromichi Ohashi³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech.IGSSE¹, Tokyo Tech.FRC², AIST³)

9:30 AM - 11:30 AM

[19a-P7-13] Study on Fabrication Sequence of InAlN MOS Diodes with ALD-Al₂O₃ Insulator Layer

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

9:30 AM - 11:30 AM

[19a-P7-14] Photo-induced current in n-AlGaAs/GaAs heterojunction channels driven by local illumination at edge regions of Hall bar

^○Takuya Kawazu¹, Takeshi Noda¹, Takaaki Mano¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^1,2 (NIMS¹, Toyota Tech. Inst.²)

Oral presentation

[19p-D7-1~17] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:30 PM

[19p-D7-1] [JSAP Paper Award Speech](30 min.)Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm

^○Xiuju Zhou¹, Qiang Li¹, Chak Wah Tang¹, Kei May Lau¹ (HKUST¹)

1:30 PM - 1:45 PM

[19p-D7-2] Frequency Limits of Nanoscale HEMTs with Various Channel Materials

^○Shohei Nagai¹, Yutaro Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe², Akifumi Kasamatsu², Hiroki Fujishiro¹ (Tokyo University of Science¹, National Institute of Information and Communications Technology²)

1:45 PM - 2:00 PM

[19p-D7-3] Comparative Study on III-V DG MOSFETs with Various Channel Materials

^○Ryoko Ohama¹, Akio Nisida¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo University of Science¹)

2:00 PM - 2:15 PM

△ [19p-D7-4] Channel thickness dependence on III–V–OI InGaAs MOSFET with n-InP source for high current density

^○Kazuto Ohsawa¹, Atsushi Kato¹, Takeru Sagai¹, Toru Kanazawa¹, Eiji Uehara¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

2:15 PM - 2:30 PM

[19p-D7-5] Over 500-GHz f_t InP/InGaAs HBT technology using a SiN/SiO₂ sidewall process

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Corp.¹)

2:30 PM - 2:45 PM

△ [19p-D7-6] Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

^○Masashi Kashiwano¹, Atsushi Yukimachi¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

2:45 PM - 3:00 PM

△ [19p-D7-7] Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InSb HEMTs taking into account the non-parabolicity of the conduction band

^○(D)Yui Nishio¹, Takahiro Tange¹, Satou Takato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

3:00 PM - 3:15 PM

△ [19p-D7-8] Effect of underlying metal on gold plating line fabricated on GaN

^○Kazuhiro Maeda¹, Koichiro Nishizawa¹, Toshihiko Shiga¹, Masayoshi Takemi¹ (Mitsubishi Electric Corp.¹)

3:15 PM - 3:30 PM

△ [19p-D7-9] Ohmic Contact Formation on β-Ga₂O₃ Using Si Ion Implantation

^○Kohei Sasaki^1,2, Masataka Higashiwaki², Akito Kuramata¹, Takekazu Masui³, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², Koha Co., Ltd.³)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[19p-D7-10] Depletion-mode Ga₂O₃ MOSFET

^○Masataka Higashiwaki¹, Kohei Sasaki^2,1, Takafumi Kamimura¹, Man Hoi Wong¹, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi² (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

4:00 PM - 4:15 PM

[19p-D7-11] Al2O3/ n-Ga2O3 MOS diode (2)

^○Takafumi Kamimura¹, Man Hoi Wong¹, Kohei Sasaki^2,1, Krishnamuruthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi², Masataka Higashiwaki¹ (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

4:15 PM - 4:30 PM

[19p-D7-12] Transcription of pattern on GaAs(001) substrate using porous aluminum mask

^○(M1)Takenori Yamazaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri. & Tech¹)

4:30 PM - 4:45 PM

[19p-D7-13] Electrochemical formation of GaN porous nano structures using backside-light irradiation

^○Akio Watanabe¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (RCIQE. Hokkaido Univ.¹)

4:45 PM - 5:00 PM

[19p-D7-14] Mechanical transfer of AlGaN/GaN HEMTs to a copper plate using layered BN as a release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Yasuyuki Kobayashi¹, Tetsuya Akasaka¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Lab.¹)

5:00 PM - 5:15 PM

[19p-D7-15] Application of super-higher-order nonlinear dielectric microscopy for power-device analysis: Cross-sectional imaging of SiC-MOSFET

^○Norimichi Chinone¹, Takashi Nakamura², Yasuo Cho¹ (RIEC, Tohoku Univ.¹, ROHM Co., Ltd.²)

5:15 PM - 5:30 PM

[19p-D7-16] Analytical Study on a Common Gate Triple Dot Single Electron Turnstile with Asymmetric Gate Capacitances

^○Atsushi Nakajima¹, Shigeru Imai¹ (Ritsumeikan Univ.¹)

5:30 PM - 5:45 PM

[19p-D7-17] Evaluation and fabrication of metallo-dielectric semiconductor pillar nanocavities

^○Ryo Takemoto¹, Nagisa Ishihara¹, Hiroyuki Kurosawa¹, Ikuo Suemune¹ (RIES Hokkaido Univ.¹)

Oral presentation

[20a-D7-1~11] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [20a-D7-1] Effect of N₂ Addition to Cl₂ Plasma for GaN Etching

^○(M2)Zecheng Liu¹, Jongyun Park¹, Jiadong Cao¹, Takashi Kako¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori^{1
(Nagoya Univ.¹)}

9:15 AM - 9:30 AM

[20a-D7-2] Study of the cleaning solution to suppress the excess oxidation of the GaN surface

^○Yukihiro Tsuji^1,2, Tsukuru Katsuyama¹, Akinobu Teramoto², Yasuyuki Shirai², Shigetoshi Sugawa², Tadahiro Ohmi² (Sumitomo Electric Industries, Ltd.¹, Tohoku Univ.²)

9:30 AM - 9:45 AM

[20a-D7-3] Influence of ozone introduction on electrical characteristics of MIS-structures with ALD-Al₂O₃

^○(M1)Yusuke Yoshida¹, Joseph Freedsman¹, Toshiharu Kubo¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

9:45 AM - 10:00 AM

△ [20a-D7-4] Effect of high pressure water vapor annealing for ALD-Al₂O₃ film on n-GaN

^○Koji Yoshitsugu¹, Tomoaki Umehara¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, JST-CREST²)

10:00 AM - 10:15 AM

[20a-D7-5] Improvement of Al₂O₃/InAlN interface properties through two-step ALD process interrupted by high-temperature annealing

^○Takuma Nakano¹, Masahito Chiba¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

10:15 AM - 10:30 AM

△ [20a-D7-6] Characterization of MOS Interface States and their Effects on Electrical Properties in GaN-based MOS-HEMTs

^○Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[20a-D7-7] Effect of H plasma treatment on p-GaN Schottky diodes

^○Taro Aoki¹, Tomohiro Yoshida², Tetsuya Suemitsu², Naoki Kaneda³, Tomoyoshi Mishima³, Kenji Shiojima¹ (Univ. of Fukui¹, Tohoku Univ.², Hitachi Cable³)

11:00 AM - 11:15 AM

[20a-D7-8] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

^○(M1)Yuhei Kihara¹, Shiojima Kenzi¹, Toshitika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima¹ (Univ.of Fukui¹, Hitachi Cable²)

11:15 AM - 11:30 AM

[20a-D7-9] Effect of intermediate AlGaN layer on properties of GaN Schottky diodes

^○(M2)Wancheng Ma¹, Tamotu Hashizume^1,2 (Graduate School of Information Science and Technology, Hokkdaido Univ¹, JST-CREST²)

11:30 AM - 11:45 AM

△ [20a-D7-10] GaN Schottky Barrier Diode with TiN Electrode for Microwave Power Rectification

^○(M1C)Yuki Itai¹, Akinori Kishi¹, Liuan Li¹, Takayuki Shiraishi¹, Kazuhito Fukui¹, Qiang Liu¹, Jin-Ping Ao¹, Yasuo Ohno² (STS Univ. Tokushima¹, e-Device Inc²)

11:45 AM - 12:00 PM

△ [20a-D7-11] Current collapse characterization of AlGaN/GaN HEMT using a dual-gate structure

^○Kenya Nishiguchi¹, Joel T. Asubar¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

Oral presentation

[20p-D7-1~8] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-D7-1] Fundamental Study on Mg-Ion Implanted GaN Grown on a Free-Standing GaN Substrate

^○Takuya Oikawa¹, Naoki Kaneda², Shigeki Kato¹, Tomoyoshi Mishima², Tohru Nakamura¹ (Hosei University¹, Hitachi Cable Ltd.²)

1:15 PM - 1:30 PM

[20p-D7-2] Electrical Characterization of TiSi₂ Contacts on AlGaN/GaN Structure

^○Xihao Tan¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Wataru Saito³, Hiroshi Iwai¹, Kenji Natori¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Toshiba corp.³)

1:30 PM - 1:45 PM

[20p-D7-3] Annealing Temperture Dependent Contact Resistance of TiC Electrodes on AlGaN/GaN

^○Yoshihiro Matsukawa¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Wataru Saito³, Hiroshi Iwai¹, Kenji Natori¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.³)

1:45 PM - 2:00 PM

[20p-D7-4] AlGaN thickness dependence of contact characteristics on AlGaN/GaN HEMT

^○Yusuke Takei¹, Masayuki Kamiya¹, Kazuma Terayama¹, Hiroaki Yonezawa¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

2:00 PM - 2:15 PM

[20p-D7-5] Influence of metal material on capacitance for Schottky-gated AlGaN/GaN

^○Syu Munekiyo¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

2:15 PM - 2:30 PM

[20p-D7-6] Interface properties of n-GaN MIS Diodes with ZrO₂/Al₂O₃ multi-layers

^○(D)Shintaro Kodama¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (University of Fukui¹)

2:30 PM - 2:45 PM

[20p-D7-7] Temperature Dependence of pH Sensor on AlGaN/GaN Heterostructure

^○Kazutaka Niigata¹, Naoya Aisaka¹, Kazuhiro Narano¹, Jin-Ping Ao¹ (STS Univ. tokushima¹)

2:45 PM - 3:00 PM

[20p-D7-8] Self-aligned Ion-implanted Normally-off MISFETs on Free-Standing GaN Substrates

^○(M2)Hiroki Ogawa¹, Hayao Kasai¹, Naoki Kaneda³, Tomonobu Tsuchiya², Mishima Tomoyoshi³, Tohru Nakamura¹ (Hosei Univ.¹, Hitachi Ltd.², Hitachi Cable Ltd.³)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

△ [19a-P7-3] Mapping evaluation of n-GaN Schottky diodes using scanning internal photoemission microscopy

[19p-D7-1~17] 14.3 Electron devices and Process technology

△ [19p-D7-4] Channel thickness dependence on III–V–OI InGaAs MOSFET with n-InP source for high current density

△ [19p-D7-6] Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

△ [19p-D7-7] Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InSb HEMTs taking into account the non-parabolicity of the conduction band

△ [19p-D7-8] Effect of underlying metal on gold plating line fabricated on GaN

△ [19p-D7-9] Ohmic Contact Formation on β-Ga2O3 Using Si Ion Implantation

[20a-D7-1~11] 14.3 Electron devices and Process technology

△ [20a-D7-1] Effect of N2 Addition to Cl2 Plasma for GaN Etching

△ [20a-D7-4] Effect of high pressure water vapor annealing for ALD-Al2O3 film on n-GaN

△ [20a-D7-6] Characterization of MOS Interface States and their Effects on Electrical Properties in GaN-based MOS-HEMTs

△ [20a-D7-10] GaN Schottky Barrier Diode with TiN Electrode for Microwave Power Rectification

△ [20a-D7-11] Current collapse characterization of AlGaN/GaN HEMT using a dual-gate structure

[20p-D7-1~8] 14.3 Electron devices and Process technology

△ [19p-D7-9] Ohmic Contact Formation on β-Ga₂O₃ Using Si Ion Implantation

△ [20a-D7-1] Effect of N₂ Addition to Cl₂ Plasma for GaN Etching

△ [20a-D7-4] Effect of high pressure water vapor annealing for ALD-Al₂O₃ film on n-GaN