The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P7-9] Potential characterization of the AlGaN/GaN HEMTs with Al2O3 and SiN passivation layers deposited by the ECR sputter

○Chihoko Mizue1, Hiroyuki Ichikawa1, Kazutaka Inoue1 (Transmission Device Lab. SEI1)

Keywords:GaN HEMT,ECRスパッタ,Al2O3