The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-P7-1~14] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P7-8] Gate bias dependence of electroluminescence in AlGaN/GaN HEMT with a transparent gate electrode

○Tomotaka Narita1, Yuichi Fujimoto1, Akio Wakejima1, Takashi Egawa1 (Nagoya Inst. of Tech.1)

Keywords:GaN,HEMT