The 74th JSAP Autumn Meeting,2013

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D7-1~17] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

4:45 PM - 5:00 PM

[19p-D7-14] Mechanical transfer of AlGaN/GaN HEMTs to a copper plate using layered BN as a release layer

○Masanobu Hiroki1, Kazuhide Kumakura1, Yasuyuki Kobayashi1, Tetsuya Akasaka1, Hideki Yamamoto1, Toshiki Makimoto1 (NTT Basic Research Lab.1)

Keywords:GaN,HEMT,BN