[20a-D7-1~11] 14.3 Electron devices and Process technology

[20a-D7-8] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

^○(M1)Yuhei Kihara¹, Shiojima Kenzi¹, Toshitika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima¹ (Univ.of Fukui¹, Hitachi Cable²)

Keywords:n-GaNショットキー障壁高さ