[20a-D7-1~11] 14.3 Electron devices and Process technology

[20a-D7-7] Effect of H plasma treatment on p-GaN Schottky diodes

^○Taro Aoki¹, Tomohiro Yoshida², Tetsuya Suemitsu², Naoki Kaneda³, Tomoyoshi Mishima³, Kenji Shiojima¹ (Univ. of Fukui¹, Tohoku Univ.², Hitachi Cable³)

Keywords:水素プラズマ処理,ショットキー接触,光応答法