Characterization of MOS Interface States and their Effects on Electrical Properties in GaN-based MOS-HEMTs

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

10:15 AM - 10:30 AM

^○Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

Keywords:GaN,MOS,界面