Improvement of Al<sub>2</sub>O<sub>3</sub>/InAlN interface properties through two-step ALD process interrupted by high-temperature annealing

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

10:00 AM - 10:15 AM

^○Takuma Nakano¹, Masahito Chiba¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

Keywords:InAlN