[20a-D7-1~11] 14.3 Electron devices and Process technology

△ [20a-D7-1] Effect of N₂ Addition to Cl₂ Plasma for GaN Etching

^○(M2)Zecheng Liu¹, Jongyun Park¹, Jiadong Cao¹, Takashi Kako¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori^{1 (Nagoya Univ.1)}

Keywords:エッチング,チッカガリウム