Over 500-GHz ft InP/InGaAs HBT technology using a SiN/SiO2 sidewall process

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

2:15 PM - 2:30 PM

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Corp.¹)

Keywords:HBT