Channel thickness dependence on III–V–OI InGaAs MOSFET with n-InP source for high current density

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

2:00 PM - 2:15 PM

^○Kazuto Ohsawa¹, Atsushi Kato¹, Takeru Sagai¹, Toru Kanazawa¹, Eiji Uehara¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

Keywords:InGaAs MOSFET,チャネル厚依存性