Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

2:30 PM - 2:45 PM

^○Masashi Kashiwano¹, Atsushi Yukimachi¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

Keywords:超格子,superlattice,subthreshold slope