[20p-D7-1~8] 14.3 Electron devices and Process technology

[20p-D7-4] AlGaN thickness dependence of contact characteristics on AlGaN/GaN HEMT

^○Yusuke Takei¹, Masayuki Kamiya¹, Kazuma Terayama¹, Hiroaki Yonezawa¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

Keywords:GaN,コンタクト,エッチング