Study on Fabrication Sequence of InAlN MOS Diodes with ALD-Al<sub>2</sub>O<sub>3</sub> Insulator Layer

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

Keywords:InAlN,MOS,界面