The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D7-1~11] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

11:45 AM - 12:00 PM

△ [20a-D7-11] Current collapse characterization of AlGaN/GaN HEMT using a dual-gate structure

○Kenya Nishiguchi1, Joel T. Asubar1, Tamotsu Hashizume1,2 (RCIQE Hokkaido Univ.1, JST-CREST2)

Keywords:GaN,collapse,HEMT