[19a-P8-1~16] 15.3 III-V族エピタキシャル結晶

▲ [19a-P8-15] Relationship between ionized acceptors density and hole traps in p-type GaAsN grown by chemical beam epitaxy

^○Elleuch Omar，Bouzazi Boussairi，幸脇広幸，池田和磨，小島信晃，大下祥雄，山口真史 (豊田工大)

キーワード：GaAsN,DLTS,Annealing