Relationship between ionized acceptors density and hole traps in p-type GaAsN grown by chemical beam epitaxy

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Elleuch Omar¹, Bouzazi Boussairi¹, Kowaki Hiroyuki¹, Ikeda Kazuma¹, Kojima Nobuaki¹, Ohshita Yoshio¹, Yamaguchi Masafumi¹ (Toyota Tech. Inst.¹)

Keywords:GaAsN,DLTS,Annealing