Interfacial electrical characteristics of directly-bonded InP/Si substrate for GaInAsP system growth

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Yoshinori Kanaya¹, Keiichi Matsumoto¹, Xinxin Zhang¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

Keywords:直接貼付法,InPテンプレート,MOVPE