[19a-P8-1~16] 15.3 III-V-group epitaxial crystals

[19a-P8-3] Extended emission wavelength of bilayer InAs-QDs on a GaAs substrate (III)

^○(M2)Yohei Nakatani¹, Nobuhiko Ozaki¹, Syunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³, Edmund Clarke⁴, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, U.Sheffield⁴)

Keywords:MBE,InAs量子ドット,bi-layer