[19a-P9-1~10] 15.6 IV-group-based compounds

[19a-P9-10] Optimization of implantation conditions on high-dose ion-implantation into 4 degrees off 4H-SiC epitaxial layer

^○Ken-ichi Yoshida¹, Sachi Niki¹, Hitoshi Kawanowa¹, Shinji Nagamachi¹ (Ion Technology Center¹)

Keywords:炭化珪素,イオン注入