TLM Pattern Dependence of Low Ohmic Resistance Ni Silicide on n+ 4H-SiC by Partial Amorphousization

Presentation information

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P9 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○(M1)DESILVA MILANTHA¹, SHIN=ICHIRO KUROKI¹, TADASHI SATO¹, TAKAMARO KIKKAWA¹ (HIROSHIMA UNIVERSITY¹)

Keywords:SiC,オーミック