Nitrogen Doping of 4H-SiC by Laser Irradiation in Ammonia Solution

Presentation information

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P9 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○(B)Yuki Inoue¹, Hiroshi Ikenoue¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tatsuo Okada¹, Tanemasa Asano¹ (Kyushu Univ.¹)

Keywords:SiC,laser,Doping