Optimizing Annealing Process of poly-Si Diode for Phase Change Devices

Presentation information

Oral presentation

16. Amorphous and Microcrystalline Materials » 16.1 Fundamental properties and their evaluation in disordered materials

Thu. Sep 19, 2013 1:30 PM - 6:15 PM A2 (TC1 1F-116)

5:15 PM - 5:30 PM

^○Mitsuharu Tai¹, Masaharu Kinoshita¹, Takasumi Ohyanagi¹, Takahiro Morikawa¹, Kenichi Akita¹, Norikatsu Takaura¹ (LEAP¹)

Keywords:poly-Siダイオード,RTA