[19p-B5-1~22] 15.4 III-V-group nitride crystals

[19p-B5-1] [JSAP Paper Award Speech](30 min.) Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

^○Yoshinao Kumagai¹, Yuki Kubota², Toru Nagashima^1,2, Toru Kinoshita², Rafael Dalmau³, Raoul Schlesser³, Baxter Moody³, Jinqiao Xie³, Hisashi Murakami¹, Akinori Koukitu¹, Zlatko Sitar^3,4 (TUAT¹, TOKUYAMA², HexaTech³, NC State Univ.⁴)