「応用物理学会優秀論文賞受賞記念講演」（30分）<br>Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

13:00 〜 13:30

[19p-B5-1] 「応用物理学会優秀論文賞受賞記念講演」（30分）
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

^○熊谷義直¹，久保田有紀²，永島徹^1,2，木下亨²，Rafael Dalmau³，Raoul Schlesser³，Baxter Moody³，Jinqiao Xie³，村上尚¹，纐纈明伯¹，Zlatko Sitar^3,4 (農工大¹，トクヤマ²，HexaTech³，ノースカロライナ州大⁴)