The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-B5-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

4:15 PM - 4:30 PM

[19p-B5-12] Side-etching characteristics of GaN hydrogen environment anisotropic thermal etching (HEATE)

○(M2)Hiroki Hachiya1, Akihiko Kikuchi1 (Sophia University1)

Keywords:GaN