[19p-B5-1~22] 15.4 III-V-group nitride crystals

[19p-B5-15] Fabrication and Evaluation of Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer

^○Kota Nakao¹, Haziq Muhammad¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. and Eng., Yamaguchi Univ.¹)

Keywords:semipolar GaN