[19p-B5-1~22] 15.4 III-V-group nitride crystals

△ [19p-B5-21] Optimization of Dark current in Nitride-based hetero-field-effect-transistor-type photosensors

^○Mami Ishiguro¹, Kazuya Ikeda¹, Masataka Mizuno¹, Takuya Murase¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Aksaki^1,2 (Meijo Univ.¹, Akasaki Inst.,Nagoya Univ.²)

Keywords:受光素子