The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-B5-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

2:45 PM - 3:00 PM

[19p-B5-7] Formation of SiC buffer layer by carbonization of Si surface using CO gas for growth of nitrides on Si substrate

○(PC)Momoko Deura1, Hiroyuki Fukuyama1 (IMRAM, Tohoku Univ.1)

Keywords:炭化,SI,COガス