Formation of SiC buffer layer by carbonization of Si surface using CO gas for growth of nitrides on Si substrate

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

2:45 PM - 3:00 PM

^○(PC)Momoko Deura¹, Hiroyuki Fukuyama¹ (IMRAM, Tohoku Univ.¹)

Keywords:炭化,SI,COガス