[19p-C8-1~18] 13.6 Silicon devices / Integration technology

[19p-C8-6] The characteristics of Excited states of double-gate Si single-electron transistor

^○Isamu Yoshioka¹, Takafumi Uchida¹, Hikaru Satou¹, Masashi Arita¹, Satoshi Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

Keywords:単電子トランジスタ