The analysis of recombination process via the hole trap in GaAsN grown by Chemical Beam Epitaxy

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

1:45 PM - 2:00 PM

^○Hiroyuki Kowaki¹, Bouzazi Boussairi¹, Kazuma Ikeda¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹)

Keywords:再結合中心