[20a-C11-1~11] 9.3 Nanoelectronics

△ [20a-C11-7] Ni Nanogap-Based Ferromagnetic Single-Electron Transistors Fabricated by Field-Emission-Induced Electromigration

^○Ryutaro Suda¹, Kohei Morihara¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

Keywords:強磁性単電子トランジスタ,ナノギャップ,エレクトロマイグレーション