Poster presentation

[19p-P3-1~6] 9.3 Nanoelectronics

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P3 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-P3-1] Evaluation of two-dimensional device-error-redundant single-electron oscillator system(2)

^○Yoshisato Murakami¹, Takahide Oya¹ (yokohama national university¹)

1:30 PM - 3:30 PM

[19p-P3-2] Electrical Properties of Nanogap-Based Single-Electron Transistors Using Field-Emission-Induced Electromigration

^○Kohei Morihara¹, Ryutaro Suda¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

1:30 PM - 3:30 PM

[19p-P3-3] Fabrication of Integrated Series-Parallel-Connected Nanogaps by Field-Emission-Induced Electromigration

^○Takahiro Toyonaka¹, Mitsuki Ito¹, Akihiro Hirata¹, jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

1:30 PM - 3:30 PM

[19p-P3-4] Integration of Series-Connected 30 Ni Nanogaps by Field-Emission-Induced Electromigration

^○Akihiro Hirata¹, Mitsuki Ito¹, Takahiro Toyonaka¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

1:30 PM - 3:30 PM

[19p-P3-5] In-Situ Observation of Electromigration-Induced Nanogap Formation by Atomic Force Microscopy

^○Mamiko Yagi¹, Ryutaro Suda¹, Takanari Saito¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

1:30 PM - 3:30 PM

[19p-P3-6] Simultaneous Control of Electrical Properties of Integrated Nanogaps by Field-Emission-Induced Electromigration

^○Mitsuki Ito¹, Akihiro Hirata¹, Takahiro Toyonaka¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

Oral presentation

[20a-C11-1~11] 9.3 Nanoelectronics

Fri. Sep 20, 2013 9:00 AM - 12:00 PM C11 (TC3 2F-210)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-C11-1] Design of novel memory circuit for single-electron DOMINO logic system

^○(M1)Hiroyuki Otake¹, Takahide Oya¹ (Yokohama National Univ.¹)

9:15 AM - 9:30 AM

[20a-C11-2] Novel single-electron information-processing circuits mimicking behavior of ant groups (2)

^○(M1)Yuji Obi¹, Takahide Oya¹ (Yokohama National Univ.¹)

9:30 AM - 9:45 AM

[20a-C11-3] Fabrication of Ge/Si core/shell nanowire quantum dots

^○Kenji Wada^1,2, Rui Wang¹, Toshikazu Suzuki^1,2, Russel Deacon¹, Naoki Fukata³, Kouji Ishibashi¹ (RIKEN¹, Chiba Univ.², NIMS³)

9:45 AM - 10:00 AM

[20a-C11-4] Formation of High Density Fe-Nanodots on SiO2 Induced by Remote Hydrogen Plasma

^○Hai Zhang¹, Ryo Fukuoka¹, Yuuki Kabeya¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (Grad. School of Eng. Nagoya Univ.¹)

10:00 AM - 10:15 AM

[20a-C11-5] Coulomb blockade thermometry comprising Al tunnel junctions reduced by the addition of SiO evaporation

^○(M2)Akito Ushizawa¹, Masashi Takiguchi¹, Hiroshi Shimada¹, Masataka Moriya¹, Yoshinao Mizugaki¹ (Univ. of Electro-Comm¹)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-C11-6] Magneto resistance ratio measuring under superconductive gap on ferromagnetic single-electron transistor with superconductive island

^○(D)Masashi Takiguchi¹, Hiroshi Shimada¹, Yoshinao Mizugaki¹ (Univ. of Electro-Comm.¹)

10:45 AM - 11:00 AM

△ [20a-C11-7] Ni Nanogap-Based Ferromagnetic Single-Electron Transistors Fabricated by Field-Emission-Induced Electromigration

^○Ryutaro Suda¹, Kohei Morihara¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

11:00 AM - 11:15 AM

[20a-C11-8] Top-gate Control of Graphene-based Three-branch Nano-junction Device

^○(M2)Xiang Yin¹, Seiya Kasai¹ (Hokkaido Univ. RCIQE¹)

11:15 AM - 11:30 AM

[20a-C11-9] Investigation of Temperature Distribution of Graphene Adjusted with Feedback-Controlled Voltage Using In-Situ NIR CCD Imaging System

^○Takanari Saito¹, Ryutaro Suda¹, Misae Matayoshi¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

11:30 AM - 11:45 AM

[20a-C11-10] Characterization of Flashing Ratchet Operation for An Electron Brownian Ratchet Device Using A GaAs-based Nanowire

^○Yushi Abe^1,2, Takayuki Tanaka^1,2, Seiya Kasai^1,2 (Graduate School of Info. Sci. Tech. Hokkaido Univ.¹, RCIQE. Hokkaido Univ.²)

11:45 AM - 12:00 PM

[20a-C11-11] Study on Biological Signal Detection Utilizing Stochastic Resonance in Nanowire FET Network

^○Yuri Imai¹, Seiya Kasai¹ (Hokkaido Univ.¹)

Oral presentation

[20p-C11-1~7] 9.3 Nanoelectronics

Fri. Sep 20, 2013 1:00 PM - 2:45 PM C11 (TC3 2F-210)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-C11-1] Detecting small signals using stochastic resonance based on a nanowire transistor

^○Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (NTT Basic Research Labs.¹)

1:15 PM - 1:30 PM

[20p-C11-2] Investigation of the molecular dynamics detection using a GaAs based nanowire FET

^○Shinya Inoue^1,2, Ryota Kuroda^1,2, Seiya Kasai^1,2 (Graduate School of IST, Hokkaido Univ.¹, RCIQE, Hokkaido Univ.²)

1:30 PM - 1:45 PM

[20p-C11-3] Fabrication and transport properties of photo-sensitive RuTPP(CO) single molecule transistors

^○(M2)Naoya Okamura¹, Sakata Shuichi¹, Kenji Yoshida¹, Kazuyuki Ishii¹, Kazuhiko Hirakawa^1,2 (IIS Univ. of Tokyo¹, INQIE²)

1:45 PM - 2:00 PM

▼ [20p-C11-4] Thermoelectricity in Molecular Junctions with Ni Electrodes

^○See Kei Lee¹, Ryo Yamada¹, Tatsuhiko Ohto¹, Hirokazu Tada¹ (Osaka Univ.¹)

2:00 PM - 2:15 PM

△ [20p-C11-5] In-situ TEM Observation of Au thin wire breaking process caused by electromigration

^○Yosuke Murakami¹, Hayato Ochi¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (IST, Hokkaido Univ.¹)

2:15 PM - 2:30 PM

[20p-C11-6] Geometry variation of Ni nano structure by Bipolar Feedback Voltage Control

^○Hayato Ochi¹, Yosuke Murakami¹, Koichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (IST, Hokkaido Univ.¹)

2:30 PM - 2:45 PM

[20p-C11-7] Investigation of Feedback-Controlled Electromigration Using Real Time Operating System (RTOS)

^○Masazumi Ando¹, Takanari Saito¹, Yuma Kanamaru¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

Sessions

09. Applied Materials Science » 9.3 Nanoelectronics

[19p-P3-1~6] 9.3 Nanoelectronics

[19p-P3-1] Evaluation of two-dimensional device-error-redundant single-electron oscillator system(2)

[19p-P3-2] Electrical Properties of Nanogap-Based Single-Electron Transistors Using Field-Emission-Induced Electromigration

[19p-P3-3] Fabrication of Integrated Series-Parallel-Connected Nanogaps by Field-Emission-Induced Electromigration

[19p-P3-4] Integration of Series-Connected 30 Ni Nanogaps by Field-Emission-Induced Electromigration

[19p-P3-5] In-Situ Observation of Electromigration-Induced Nanogap Formation by Atomic Force Microscopy

[19p-P3-6] Simultaneous Control of Electrical Properties of Integrated Nanogaps by Field-Emission-Induced Electromigration

[20a-C11-1~11] 9.3 Nanoelectronics

[20a-C11-1] Design of novel memory circuit for single-electron DOMINO logic system

[20a-C11-2] Novel single-electron information-processing circuits mimicking behavior of ant groups (2)

[20a-C11-3] Fabrication of Ge/Si core/shell nanowire quantum dots

[20a-C11-4] Formation of High Density Fe-Nanodots on SiO2 Induced by Remote Hydrogen Plasma

[20a-C11-5] Coulomb blockade thermometry comprising Al tunnel junctions reduced by the addition of SiO evaporation

[20a-C11-6] Magneto resistance ratio measuring under superconductive gap on ferromagnetic single-electron transistor with superconductive island

△ [20a-C11-7] Ni Nanogap-Based Ferromagnetic Single-Electron Transistors Fabricated by Field-Emission-Induced Electromigration

[20a-C11-8] Top-gate Control of Graphene-based Three-branch Nano-junction Device

[20a-C11-9] Investigation of Temperature Distribution of Graphene Adjusted with Feedback-Controlled Voltage Using In-Situ NIR CCD Imaging System

[20a-C11-10] Characterization of Flashing Ratchet Operation for An Electron Brownian Ratchet Device Using A GaAs-based Nanowire

[20a-C11-11] Study on Biological Signal Detection Utilizing Stochastic Resonance in Nanowire FET Network

[20p-C11-1~7] 9.3 Nanoelectronics

[20p-C11-1] Detecting small signals using stochastic resonance based on a nanowire transistor

[20p-C11-2] Investigation of the molecular dynamics detection using a GaAs based nanowire FET

[20p-C11-3] Fabrication and transport properties of photo-sensitive RuTPP(CO) single molecule transistors

▼ [20p-C11-4] Thermoelectricity in Molecular Junctions with Ni Electrodes

△ [20p-C11-5] In-situ TEM Observation of Au thin wire breaking process caused by electromigration

[20p-C11-6] Geometry variation of Ni nano structure by Bipolar Feedback Voltage Control

[20p-C11-7] Investigation of Feedback-Controlled Electromigration Using Real Time Operating System (RTOS)