[20a-C8-1~12] 13.6 Silicon devices / Integration technology

[20a-C8-8] Comparative study of electrical characteristics for TiN metal and poly-Si gated charge trapping type FinFET flash memories

^○Yongxun Liu¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹)

Keywords:フラッシュメモリ